complementary silicon power transistors ...specifically des igned for general purpose amplifier and switching applications. ? isolated overmold package (1500 volts rms min) ? electrically similar to the popular mje3055t and mje2955t ? collectoremitter sustaining voltage e v ceo(sus) 90 volts ? 10 amperes rated collector current ? no isolating washers required ? reduced system cost ? ul recognized, file #e69369, to 3500 v rms isolation ??????????????????????? ??????????????????????? maximum ratings ?????????????? ?????????????? rating ???? ???? symbol ????? ????? value ??? ??? unit ?????????????? ?????????????? collectoremitter sustaining voltage ???? ???? v ceo(sus) ????? ????? 90 ??? ??? vdc ?????????????? ?????????????? collectoremitter breakdown voltage ???? ???? v ces ????? ????? 90 ??? ??? vdc ?????????????? ?????????????? baseemitter voltage ???? ???? v ebo ????? ????? 5 ??? ??? vdc ?????????????? ?????????????? collector current e continuous ???? ???? i c ????? ????? 10 ??? ??? adc ?????????????? ?????????????? base current e continuous ???? ???? i b ????? ????? 6 ??? ??? adc ?????????????? ? ???????????? ? ?????????????? rms isolation voltage (3) test no. 1 per fig. 4 (for 1 sec, r.h. < 30%, test no. 2 per fig. 5 t a = 25 c) test no. 3 per fig. 6 ???? ? ?? ? ???? v isol ????? ? ??? ? ????? 4500 3500 1500 ??? ? ? ? ??? v rms ?????????????? ? ???????????? ? ?????????????? total power dissipation @ t c = 25 c (2) derate above 25 c ???? ? ?? ? ???? p d ????? ? ??? ? ????? 30 0.25 ??? ? ? ? ??? watts w/ c ?????????????? ?????????????? total power dissipation @ t a = 25 c derate above 25 c ???? ???? p d ????? ????? 2 0.016 ??? ??? watts w/ c ?????????????? ?????????????? operating and storage temperature range ???? ???? t j , t stg ????? ????? 55 to +150 ??? ??? c ??????????????????????? ? ????????????????????? ? ??????????????????????? thermal characteristics ?????????????? ?????????????? characteristic ???? ???? symbol ????? ????? max ??? ??? unit ?????????????? ?????????????? thermal resistance e junction to case (2) ???? ???? r q jc ????? ????? 4 ??? ??? c/w ?????????????? ?????????????? thermal resistance e junction to ambient ???? ???? r q ja ????? ????? 62.5 ??? ??? c/w ?????????????? ?????????????? lead temperature for soldering purposes ???? ???? t l ????? ????? 260 ??? ??? c (1) pulse test: pulse width = 5 ms, duty cycle 10%. (2) measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices moun ted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (3) proper strike and creepage distance must be provided. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 3 1 publication order number: mjf3055/d mjf3055 mjf2955 complementary silicon power transistors 10 amperes 90 volts 30 watts npn pnp case 221d02 to220 type 1 2 3 style 2: pin 1. base 2. collector 3. emitter
mjf3055 mjf2955 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics (1) ?????????????????????? ?????????????????????? collectoremitter sustaining voltage (i c = 200 madc, i b = 0) ????? ????? v ceo(sus) ??? ??? 90 ???? ???? e ??? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 90 vdc, v be = 0) ????? ????? i ces ??? ??? e ???? ???? 1 ??? ??? m adc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 90 vdc, i e = 0) ????? ????? i cbo ??? ??? e ???? ???? 1 ??? ??? m adc ?????????????????????? ?????????????????????? emitterbase leakage (v eb = 5 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 1 ??? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i ce = 4 adc, v ce = 4 vdc) dc current gain (i ce = 10 adc, v ce = 4 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 20 5 ???? ? ?? ? ???? 100 e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 4 adc, i b = 0.4 adc) (i c = 10 adc, i b = 3.3 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 1 2.5 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 4 adc, v be = 4 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 1.5 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgainbandwidth product (v ce = 10 vdc, i c = 0.5 adc, f test = 500 khz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 2 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz (1) pulse test: pulse width = 5 ms, duty cycle 10%.
mjf3055 mjf2955 http://onsemi.com 3 i c , collector current (amps) 0.01 i c , collector current (amp) 5 0.05 0.1 2 30 500 h fe , dc current gain v ce = 2 v t j = 150 c 50 25 c -55 c 10 0.02 0.2 0.5 1 300 200 100 20 i c , collector current (amp) 1.4 1.2 0.8 2 i c , collector current (amp) 1.6 1.2 0.8 0.4 figure 1. maximum forward bias safe operating area figure 2. dc current gain figure 3. aono voltages 0.2 0 0 0.4 0.2 1 0.5 10 0.1 0.3 3 25 0.6 1 v, voltage (volts) v, voltage (volts) 100 m s dc 20 1 v ce , collector-emitter voltage (volts) 0.3 2 100 5 3 10 2 0.5 current limit secondary breakdown limit thermal limit @ t c = 25 c (single pulse) 3 5 10 20 1 0.2 30 5 ms 50 510 v be(sat) @ i c /i b = 10 v be @ v ce = 3 v pnp mjf3055 pnp mjf2955 t j = 25 c 0.2 1 0.5 10 0.1 0.3 3 25 t j = 150 c 1 ms v ce(sat) @ i c /i b = 10 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 2 v v ce(sat) @ i c /i b = 10
mjf3055 mjf2955 http://onsemi.com 4 mounted fully isolated package leads heatsink 0.110" min figure 4. clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip clip 0.107" min leads heatsink 0.107" min figure 5. clip mounting position for isolation test number 2 figure 6. screw mounting position for isolation test number 3 mounted fully isolated package mounted fully isolated package leads heatsink test conditions for isolation tests* 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a con- stant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack- age. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not reco mmend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 7. typical mounting techniques* mounting information ** for more information about mounting power semiconductors see application note an1040.
mjf3055 mjf2955 http://onsemi.com 5 package dimensions case 221d02 to220 type issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.621 0.629 15.78 15.97 inches b 0.394 0.402 10.01 10.21 c 0.181 0.189 4.60 4.80 d 0.026 0.034 0.67 0.86 f 0.121 0.129 3.08 3.27 g 0.100 bsc 2.54 bsc h 0.123 0.129 3.13 3.27 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 n 0.200 bsc 5.08 bsc q 0.126 0.134 3.21 3.40 r 0.107 0.111 2.72 2.81 s 0.096 0.104 2.44 2.64 u 0.259 0.267 6.58 6.78 b y g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane t u c s j r
mjf3055 mjf2955 http://onsemi.com 6 notes
mjf3055 mjf2955 http://onsemi.com 7 notes
mjf3055 mjf2955 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjf3055/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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